Influence of dynamic adsorption layer formation on bubble attachment to quartz and mica surfaces in solutions of pure and mixed surface-active substances
 
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Jerzy Haber Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences
CORRESPONDING AUTHOR
Jan Zawala   

Jerzy Haber Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences, ul. Niezapominajek 8, 30-239 Krakow, Poland
 
Physicochem. Probl. Miner. Process. 2018;54(4):1083–1094
 
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The paper presents systematic studies on influence of state of dynamic adsorption layer (DAL) induced at the rising bubble interface on time-scale of the bubble attachment to quartz and mica surfaces immersed in pure n-cetyl-trimethylammonium bromide (CTAB) and mixed octanol/CTAB solutions of different concentrations. It was found that in the case of pure CTAB solutions, the influence of DAL on time of bubble attachment and the three-phase contact (TPC) formation (tTPC) strongly depends on solution concentration. Generally, two solution concentration regimes were distinguished – low and high - for which different degree of solid surfaces hydrophobization was observed. It was determined that for low concentration regime the solid surface is only slightly hydrophobized while for high regime, hydrophobicity of the solid surface is much higher. Consequently, wetting film rupture for low concentration regime is governed by electrostatic interactions while for high concentration regime significance of these interactions is much smaller. As a result, the DAL influenced the film rupture in these two regimes in a quite different manner. For mixed n-octanol/CTAB solutions it was found that CTAB molecules presence is necessary condition for wetting film destabilization. Moreover, thanks to the developed approach, allowing control of initial adsorption coverage over the bubble surface (independently on concentration), it was proved that constant adsorption degree of CTAB molecules at the bubble surface in the mixture, leads to identical times of the TPC formation.
eISSN:2084-4735
ISSN:1643-1049